Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3624472
Reference21 articles.
1. Resistive Random Access Memory (ReRAM) Based on Metal Oxides
2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
3. A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
4. Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices
5. Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
Cited by 310 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Thickness dependent phase transformation and resistive switching performance of HfO2 thin films;Materials Chemistry and Physics;2024-02
2. Role of oxide barrier in a NbOx layer with noninert electrodes for high-yield threshold switching characteristics;AIP Advances;2024-01-01
3. Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer;The Journal of Chemical Physics;2023-12-06
4. Improved Resistive Switching Behaviors of Al/Ag-Doped Fe2O3 Film/ITO Devices Fabricated with a Radio-Frequency Co-Sputtering System;ECS Journal of Solid State Science and Technology;2023-12-01
5. Eightwise Switching Mechanism in Memristive SrTiO3 Devices and Its Implications on the Device Performance;physica status solidi (a);2023-11-27
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3