Grazing-incidence x-ray diffraction from GaN epitaxial layers with threading dislocations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3543842
Reference11 articles.
1. X-ray diffuse scattering from threading dislocations in epitaxial GaN layers
2. Optimization of nucleation and buffer layer growth for improved GaN quality
3. Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited masks
4. Determination of dislocation density in epitaxially grown GaN using an HCl etching process
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1. Effect of the lattice mismatch on threading dislocations in heteroepitaxial GaN layers revealed by X-ray diffraction;Journal of Alloys and Compounds;2021-03
2. Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction;Journal of Applied Physics;2018-04-28
3. Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy;Journal of Applied Crystallography;2014-01-18
4. Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy;Journal of Crystal Growth;2014-01
5. The convergence of longitudinal excitons onto the Γ5transverse exciton in GaN and the thermal activation energy of longitudinal excitons;Journal of Physics: Condensed Matter;2013-07-24
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