Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

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Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy

Published:2014-01 Issue: Volume:386 Page:1-8
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Barchuk M.,Röder C.,Shashev Y.,Lukin G.,Motylenko M.,Kortus J.,Pätzold O.,Rafaja D.

Funder

European Union (European Regional Development Fund

Ministry of Science and Art of Saxony (SMWK)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference36 articles.

1. The Blue Laser Diode;Nakamura,1997

2. Nucleation of GaN on sapphire substrates at intermediate temperatures by Hydride Vapor Phase Epitaxy

3. Thermal expansion of gallium nitride

4. The role of high-temperature island coalescence in the development of stresses in GaN films

5. Stress evolution during metalorganic chemical vapor deposition of GaN

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1. Growth and impact of intrinsic interlayers in high temperature vapor phase epitaxy of GaN;Journal of Crystal Growth;2024-06

2. Evolutionary growth strategy of GaN on (1 1 1) diamond modulated by nano-patterned buffer engineering;Materials & Design;2023-11

3. Evolutionary Growth Strategy of Gan on (111) Diamond Modulated by Self-Assembled Nano-Patterned Buffers;2023

4. Growth and Impact of Intrinsic Interlayers in High Temperature Vapor Phase Epitaxy of GaN;2023

5. The Surface Morphology Evolution of GaN Nucleation Layer during Annealing and Its Influence on the Crystal Quality of GaN Films;Coatings;2021-02-05

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