Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction
Author:
Affiliation:
1. Institute of Materials Science, TU Bergakademie Freiberg, Gustav-Zeuner-Str. 5, 09599 Freiberg, Germany
2. Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 121 16 Prague, Czech Republic
Funder
European Union and Saxonian Goverment
Nanocent, ERDF
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5009521
Reference43 articles.
1. Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
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4. The estimation of dislocation densities in metals from X-ray data
5. Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe
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