Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited masks-Reference-Cited by-同舟云学术

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Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited masks

Published:2008-11 Issue:23 Volume:310 Page:4867-4870
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hertkorn J.,Lipski F.,Brückner P.,Wunderer T.,Thapa S.B.,Scholz F.,Chuvilin A.,Kaiser U.,Beer M.,Zweck J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

2. Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphire

3. Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts

4. Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers

5. Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

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2. Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask;Coatings;2020-12-25

3. GaN‐Based Materials;Nitride Semiconductor Technology;2020-08-03

4. Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates;Journal of Applied Physics;2019-08-28

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