Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1349864
Reference58 articles.
1. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
2. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
3. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
4. Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
5. A Two-Step Method for Epitaxial Lateral Overgrowth of GaN
Cited by 62 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Development of Nanopillar Arrays Nanopatterning Without Lift‐Off for Transferable GaN‐Based µLEDs;Advanced Materials Technologies;2024-05-25
2. High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes;Journal of Applied Physics;2023-06-23
3. Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale;Journal of Applied Crystallography;2023-04-25
4. Controlled SOI nanopatterning for GaN pendeo-epitaxy;Micro and Nano Engineering;2022-04
5. Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density;Journal of Crystal Growth;2019-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3