Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate-Reference-Cited by-同舟云学术

Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate

Published:2011-06-20 Issue:25 Volume:98 Page:252105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Selvaraj S. Lawrence,Watanabe Arata,Egawa Takashi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3602919

Reference8 articles.

1. Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon

2. Enhancement of drain current density by inserting 3nm Al layer in the gate of AlGaN∕GaN high-electron-mobility transistors on 4in. silicon

3. Spatial distribution of the luminescence in GaN thin films

4. Lateral variations in threshold voltage of an AlxGa1−xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy

5. Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis;IEEE Transactions on Electron Devices;2024-03

2. Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells;IEEE Journal of Photovoltaics;2023-11

3. Comparative investigation of semipolar (11–22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD;Semiconductor Science and Technology;2023-02-06

4. Synthesis of semi-polar GaN(11-22) on a nano-patterned Si(113) substrate;ST PETER POLY U J-PH;2023

5. Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200 mm diameter silicon substrates using metal-organic chemical vapor deposition;Semiconductor Science and Technology;2020-11-20