Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=11/a=111005/pdf
Reference5 articles.
1. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers
2. Investigation of Surface Pits Originating in Dislocations in AlGaN/GaN Epitaxial Layer Grown on Si Substrate with Buffer Layer
3. AlN∕AlGaN∕GaN metal-insulator-semiconductor high-electron-mobility transistor on 4in. silicon substrate for high breakdown characteristics
4. The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate
5. Correlation between micropipes on SiC substrate and dc characteristics of AlGaN∕GaN high-electron mobility transistors
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1. Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substrate for high voltage power switching applications;Microelectronic Engineering;2023-05
2. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review;Materials Science in Semiconductor Processing;2022-11
3. On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer;Applied Physics Letters;2022-01-03
4. Step-Graded AlGaN vs superlattice: role of strain relief layer in dynamic on-resistance degradation;Applied Physics Express;2021-12-08
5. Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications;Journal of Applied Physics;2021-08-21
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