Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications-Reference-Cited by-同舟云学术

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Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications

Published:2021-08-21 Issue:7 Volume:130 Page:075702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Remesh Nayana¹^ORCID,Chandrasekar Hareesh¹^ORCID,Venugopalrao Anirudh¹^ORCID,Raghavan Srinivasan¹,Rangarajan Muralidharan¹,Nath Digbijoy N.¹

Affiliation:

1. Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India

Funder

Ministry of Electronics and Information technology

Department of Science and Technology of India

Space Technology Cell

Ministry of Human Resource Development

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0045952

Reference62 articles.

1. Reliability issues of GaN based high voltage power devices

2. Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer

3. On the origin of dynamic Ron in commercial GaN-on-Si HEMTs

4. Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

5. Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

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1. Solution process of graphene-induced ohmic contact between the metal and AlGaN/GaN for hemts application;Vietnam Journal of Science and Technology;2024-07-31

2. Gas-phase study of the behavior of trimethyl gallium and triethyl gallium by optical emission spectroscopy and quadrupole mass spectroscopy for the growth of GaN by REMOCVD (radical-enhanced metalorganic chemical vapor deposition);Japanese Journal of Applied Physics;2023-11-01

3. 8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing;Microelectronic Engineering;2023-10

4. The impact of device length on the electron’s effective mobility;Journal of Applied Physics;2023-09-28

5. Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates;Advanced Electronic Materials;2023-05-02

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