8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing-Reference-Cited by-同舟云学术

8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing

Published:2023-10 Issue: Volume:282 Page:112085
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Baby Rijo,Mandal Manish,Roy Shamibrota K.,Bardhan Abheek,Muralidharan Rangarajan,Basu Kaushik,Raghavan Srinivasan,Nath Digbijoy N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. GaN-based power devices: physics, reliability, and perspectives;Meneghini;J. Appl. Phys.,2021

2. Evaluations and applications of GaN HEMTs for power electronics;Li,2016

3. A review of high-speed GaN power modules: state of the art, challenges, and solutions;Emon;IEEE J. Emerg. Sel. Top. Power Electron.,2022

4. Robustness in short-circuit mode: Benchmarking of 600V GaN HEMTs with power Si and SiC MOSFETs;Badawi,2016

5. Evaluation of GaN HEMTs in H3TRB reliability testing;Rodriguez;Electron.,2022

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1. Revisiting the effectiveness of diamond heat spreaders on multi-finger gate GaN HEMT using chip-to-package-level thermal simulation;Microelectronics Reliability;2024-10

2. Understanding the Role of Near-Junction Diamond Heat Spreaders in Packaged 20-Gate GaN HEMT Chips via Thermal Simulation;Journal of Electronic Materials;2024-07-08

3. Fabrication and Switching Performance of 8 A–500 V D‐Mode GaN MISHEMTs;physica status solidi (a);2023-10-27