On the origin of dynamic Ron in commercial GaN-on-Si HEMTs-Reference-Cited by-同舟云学术

On the origin of dynamic Ron in commercial GaN-on-Si HEMTs

Published:2018-02 Issue: Volume:81 Page:306-311
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Karboyan Serge,Uren Michael J.,Manikant ,Pomeroy James W.,Kuball Martin

Funder

UPE

PowerGaN EPSRC

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. GaN-on-Si power technology: devices and applications;Chen;IEEE Trans. Electron Devices,2017

2. GaN as seen by the industry;Duboz;Phys. Status Solidi A,1999

3. GaN on Si Technologies for Power Switching Devices;Ishida;IEEE Trans. Electron Devices,2013

4. Dynamic Ron in commercial GaN-on-Si HEMTs: HTRB stress and modelling;Karboyan,2017

5. Leaky dielectric model for the suppression of dynamic RON in carbon-doped AlGaN/GaN HEMTs;Uren;IEEE Trans. Electron Devices,2017

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