Ge1−xSnx alloys synthesized by ion implantation and pulsed laser melting
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4891848
Reference31 articles.
1. Strain-induced band gap shrinkage in Ge grown on Si substrate
2. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
3. Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
4. Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes
5. Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys
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1. Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing;Journal of Applied Physics;2024-08-08
2. Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting;Applied Surface Science;2023-03
3. Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting;Journal of Physics: Condensed Matter;2022-12-14
4. The recovery effects of electron beam pulse treatment in Sn implanted Ge;Radiation Effects and Defects in Solids;2022-08-18
5. Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge0.89Sn0.11;Journal of Applied Physics;2022-03-14
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