Splitting of the heavy and light hole bands due to the indium-induced strain in three inch indium-alloyed semi-insulating GaAs substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373842
Reference10 articles.
1. Crystal growth of completely dislocation-free and striation-free GaAs
2. Effects of indium lattice hardening upon the growth and structural properties of large‐diameter, semi‐insulating GaAs crystals
3. Dislocation density reduction by isoelectronic impurities in semiconductors
4. Photoreflectance measurements of indium content in indium‐alloyed semi‐insulating GaAs substrates
5. Quantitative Analysis of In Density in Semi-Insulating GaAs by Photoluminescence
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