Effects of indium lattice hardening upon the growth and structural properties of large‐diameter, semi‐insulating GaAs crystals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96914
Reference6 articles.
1. A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals
2. Low dislocation, semi-insulating In-doped GaAs crystals
3. Temperature and Orientation Dependence of Plastic Deformation in GaAs Single Crystals Doped with Si, Cr, or Zn
4. Constitutional supercooling during crystal growth from stirred melts—I
5. Mechanism for dislocation density reduction in GaAs crystals by indium addition
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1. Determination of hardness and Young's modulus for important III–V compound semiconductors;Thin Solid Films;2013-12
2. Reduced damage of electron cyclotron resonance etching by In doping into p-GaN;Journal of Crystal Growth;2000-12
3. Splitting of the heavy and light hole bands due to the indium-induced strain in three inch indium-alloyed semi-insulating GaAs substrates;Journal of Applied Physics;2000-08
4. p-InGaN/n-GaN Heterojunction Diodes and their Application to Heterojunction Bipolar Transistors;MRS Proceedings;2000
5. The influence of impurities on the dislocation behavior in heteroepitaxial ZnSe on GaAs;Applied Physics Letters;1996-03-18
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