Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots-Reference-Cited by-同舟云学术

Influence of GaAs/InAs quasi-monolayer on the structural and optical properties of InAs/GaAs quantum dots

Published:2003-05 Issue:4 Volume:252 Page:493-498
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Leem Jae-Young,Jeon Minhyun,Lee Jewon,Cho Guansik,Lee Cheul-Ro,Kim Jong Su,Kang Se-Kyung,Ban S.I.,Lee J.I.,Cho Hyung Koun

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Red-Emitting Semiconductor Quantum Dot Lasers

2. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

3. S.-K. Kang, J.W. Choe, J.S. Kim, J.S. Kim, G.-H. Kim, J.I. Lee, S.K. Noh, J.Y. Leem, N. Koguchi, Proceeding of Sixth International Symposium on Advanced physical Fields, 2001, Japan, pp. 193.

4. Room-temperature single-electron memory

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