Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells
Author:
Affiliation:
1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Funder
National Science Foundation (NSF)
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4933272
Reference29 articles.
1. Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell
2. Understanding the operation of quantum dot intermediate band solar cells
3. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
4. The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept
5. Effect of strain compensation on quantum dot enhanced GaAs solar cells
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3. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction;Solar Energy Materials and Solar Cells;2023-06
4. Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure;Applied Physics Letters;2019-08-26
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