Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells
Author:
Affiliation:
1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
Funder
National Science Foundation (NSF)
U.S. Department of Energy (Department of Energy)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4922274
Reference22 articles.
1. Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics
2. All-optical switching due to state filling in quantum dots
3. General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescence
4. Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design
5. The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept
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