Dislocation density reduction by isoelectronic impurities in semiconductors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101198
Reference23 articles.
1. Temperature gradients, dopants, and dislocation formation during low-pressure LEC growth of GaAs
2. Effect of Arsenic Pressure on Dislocation Densities in Melt-grown Gallium Arsenide
3. Bridgman‐Type Apparatus for the Study of Growth‐Property Relationships: Arsenic Vapor Pressure ‐ GaAs Property Relationship
4. Critical resolved shear stress measurements for silicon‐doped GaAs single crystals
5. Growth of silicon-doped dislocation-free gaas crystals by the LEC technique for optical device applications
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