Effects of high potential barrier on InAs quantum dots and wetting layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1464230
Reference16 articles.
1. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
2. Growth of Si-doped InAs quantum dots and annealing effects on size distribution
3. Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses
4. Multidimensional quantum well laser and temperature dependence of its threshold current
5. InAs quantum-dot lasers operating near 1.3 [micro sign]m with high characteristic temperature for continuous-wave operation
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1. Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing;Journal of Materials Science: Materials in Electronics;2023-05
2. Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures vs Quantum Well Compositions;ECS Journal of Solid State Science and Technology;2022-09-01
3. Annealing Impact on Emission of InAs Quantum Dots in GaAs/Al0.30Ga0.70As Structures with Different Capping Layers;Journal of Electronic Materials;2021-05-27
4. Optical properties of InAs quantum dots embedded in InGaAs/AlGaAs/GaAs structures with different capping layers;Journal of Physics: Conference Series;2021-01-01
5. Emission and HR-XRD varying in GaAs/AlGaInAs heterostructures with InAs quantum dots at annealing;Journal of Materials Science: Materials in Electronics;2020-01-07
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