Growth of Si-doped InAs quantum dots and annealing effects on size distribution-Reference-Cited by-同舟云学术

Growth of Si-doped InAs quantum dots and annealing effects on size distribution

Published:2002-01 Issue:1 Volume:234 Page:105-109
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kim Jin Soo,Yu Phil Won,Leem Jae-Young,Lee Joo In,Noh Sam Kyu,Kim Jong Su,Kim Gu Hyun,Kang Se-Kyung,Ban Seung Il,Kim Song Gang,Jang Yu Dong,Lee Uk Hyun,Yim Jung Soon,Lee Donghan

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. J.S. Kim, P.W. Yu, J.Y. Leem, J.I. Lee, S.K. Noh, Jong Su Kim, S.M. Kim, J.S. Son, U.H. Lee, J.S. Yim, D. Lee, Appl. Phys. Lett. 21 (2001) 3247.

2. Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots

3. Electronic states tuning of InAs self-assembled quantum dots

4. Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots

5. Pressure-induced energy level crossings and narrowing of photoluminescence linewidth in self-assembled InAlAs/AlGaAs quantum dots

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