Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Exciton localization and temperature stability in self‐organized InAs quantum dots
2. Carrier thermal escape and retrapping in self-assembled quantum dots
3. Time‐resolved optical characterization of InGaAs/GaAs quantum dots
4. High photoluminescence efficiency of InGaAs/GaAs quantum dots self-formed by atomic layer epitaxy technique
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1. Quantum Dots as an Active Reservoir for Longer Effective Lifetimes in GaAs Bulk;ACS Applied Nano Materials;2024-07-04
2. The continuum state in photoluminescence of type-II In0.46Al0.54As/Al0.54Ga0.46As quantum dots;Applied Physics Letters;2016-10-31
3. Coexistence of type-I and type-II band alignments in In0.46Al0.54As/Ga0.46Al0.54As self-assembled quantum dots;Applied Physics Letters;2015-11-02
4. Competitive emissions of InAs (QDs)/GaInAsP/InP grown by GSMBE;Applied Physics A;2014-12-30
5. The influence of a continuum background on photoluminescence of self-assembled InAlAs/AlGaAs quantum dots;Journal of Luminescence;2011-08
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