Time‐resolved optical characterization of InGaAs/GaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111434
Reference21 articles.
1. Intrinsic mechanism for the poor luminescence properties of quantum-box systems
2. Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases
3. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
4. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
5. Effect of surface tension on the growth mode of highly strained InGaAs on GaAs(100)
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