Coexistence of type-I and type-II band alignments in In0.46Al0.54As/Ga0.46Al0.54As self-assembled quantum dots-Reference-Cited by-同舟云学术

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Coexistence of type-I and type-II band alignments in In0.46Al0.54As/Ga0.46Al0.54As self-assembled quantum dots

Published:2015-11-02 Issue:18 Volume:107 Page:183107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Su Linlin¹,Liang Baolai¹,Wang Ying¹,Guo Qinglin¹,Wang Shufang¹,Fu Guangsheng¹,Wang Zhiming M.²,Mazur Yuriy I.³^ORCID,Ware Morgan E.³^ORCID,Salamo Gregory J.³

Affiliation:

1. College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China

2. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China

3. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

Funder

Hebei Province 100-Talents Program

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935161

Reference36 articles.

1. Strong Enhancement of Solar Cell Efficiency Due to Quantum Dots with Built-In Charge

2. Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition

3. Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain

4. Multidimensional quantum well laser and temperature dependence of its threshold current

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1. Quantum Dots as an Active Reservoir for Longer Effective Lifetimes in GaAs Bulk;ACS Applied Nano Materials;2024-07-04

2. Band structure engineering in strain-free GaAs mesoscopic systems;Nanotechnology;2020-04-03

3. Optical characterization of type-I to type-II band alignment transition in GaAs/AlxGa1−xAs quantum rings grown by droplet epitaxy;Journal of Physics D: Applied Physics;2017-07-20

4. The continuum state in photoluminescence of type-II In0.46Al0.54As/Al0.54Ga0.46As quantum dots;Applied Physics Letters;2016-10-31

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