The continuum state in photoluminescence of type-II In0.46Al0.54As/Al0.54Ga0.46As quantum dots-Reference-Cited by-同舟云学术

The continuum state in photoluminescence of type-II In0.46Al0.54As/Al0.54Ga0.46As quantum dots

Published:2016-10-31 Issue:18 Volume:109 Page:183103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Su Linlin¹,Liang Baolai¹,Wang Ying¹,Guo Qinglin¹,Li Xiaowei¹,Wang Shufang¹,Fu Guangsheng¹,Mazur Yuriy I.²^ORCID,Ware Morgan E.³^ORCID,Salamo Gregory J.²

Affiliation:

1. College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China

2. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

3. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

Funder

The Hebei province 100-talents program

Natural Science Foundation of Hebei Province (Hebei Provincial Natural Science Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4966895

Reference39 articles.

1. Strong Enhancement of Solar Cell Efficiency Due to Quantum Dots with Built-In Charge

2. Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition

3. Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain

4. Multidimensional quantum well laser and temperature dependence of its threshold current

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