Suppression of nonradiative recombination process in directly Si-doped InAs/GaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3660794
Reference14 articles.
1. The role of p-type doping and the density of states on the modulation response of quantum dot lasers
2. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
3. Femtosecond Semiconductor-Based Optoelectonic Devices for Optical Communications and Signal-Processing Systems
4. Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
5. Evaluation of the fundamental properties of quantum dot infrared detectors
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4. Significantly improved performances of 1.3 μm InAs/GaAs QD laser by spatially separated dual-doping;Applied Physics Letters;2022-07-11
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