1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1476708
Reference13 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
3. Low-threshold oxide-confined 1.3-μm quantum-dot laser
4. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
5. 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
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