InAs quantum-dot lasers operating near 1.3 [micro sign]m with high characteristic temperature for continuous-wave operation
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20001224?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Low-threshold oxide-confined 1.3-μm quantum-dot laser
2. 1.3 μm room-temperature GaAs-based quantum-dot laser
3. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
4. 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots
5. Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser
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