Novel etching technique for a buried heterostructure GaInAs/AlGaInAs quantum‐well laser diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105471
Reference12 articles.
1. Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser
2. 1.3μm GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD)
3. InGaAs/InP quantum well lasers with sub‐mA threshold current
4. Submilliampere-threshold 1.5- mu m strained-layer multiple quantum well lasers
5. Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 1.3-μm AlGaInAs-InP buried-heterostructure lasers with mode profile converter;IEEE Photonics Technology Letters;2000-05
2. Hydride — VPE embedding of InAlGaAs laser structures with SI InP:Fe;Materials Science and Engineering: B;1995-12
3. Very low threshold current 1.3μm InAsyP1−y/InP BH strained-layer quantum well laser diodes grown by MOCVD;Electronics Letters;1992-12-03
4. 1.3 μm InAsyP1−y/InP strained‐layer quantum well laser diodes grown by metalorganic chemical vapor deposition;Applied Physics Letters;1992-11-23
5. 1.5 µm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1992-05-15
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