Hydride — VPE embedding of InAlGaAs laser structures with SI InP:Fe-Reference-Cited by-同舟云学术

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Hydride — VPE embedding of InAlGaAs laser structures with SI InP:Fe

Published:1995-12 Issue:1-3 Volume:35 Page:59-63
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Göbel R.,Steinhagen F.,Janning H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Regrowth of Semi‐Insulating InP around Etched Mesas Using Hydride Vapor Phase Epitaxy

2. Proc. 13th Int. Symp. on GaAs and Related Compounds;Kato,1986

3. High-frequency GaInAsP/InP laser mesas in (-110) direction with thick semi-insulating InP:Fe

4. Proc. 7th Int. Conf. on Semi-insulating III—V Materials;Göbel,1993

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy;Journal of Crystal Growth;2003-10

2. Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP:Fe and GaAs:Fe;Journal of Electronic Materials;2001-08

3. Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies;Journal of Crystal Growth;2001-01

4. Fabrication and I-V-T behaviour of GaInP : structures;Journal of Crystal Growth;1997-08

5. Hydride vapor phase epitaxy revisited;IEEE Journal of Selected Topics in Quantum Electronics;1997-06

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