InGaAs/InP quantum well lasers with sub‐mA threshold current

Author:

Temkin H.,Dutta N. K.,Tanbun‐Ek T.,Logan R. A.,Sergent A. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 69 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Strain relaxation of semiconductor membranes: insights from finite element modeling;Semiconductor Science and Technology;2023-02-17

2. Prediction of the photoluminescence of In0.53Ga0.47As/InP irradiated by 1MeV electron;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-01

3. Ultra-Fast Semiconductor Laser Sources;Springer Series in Optical Sciences;2017

4. Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials;Acta Physica Sinica;2015

5. Ultrafast Semiconductor Laser Sources;Springer Series in Optical Sciences;2012

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