Prediction of the photoluminescence of In0.53Ga0.47As/InP irradiated by 1MeV electron
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers;Liu;Opt. Commun.,2016
2. Structural nonlinear effects in In0.53Ga0.47As/GaAs heterostructure bipolar transistor lasers;Bahari;Optik,2015
3. In0.53Ga0.47As PIN photodiode grown by MOVPE on a semi-insulating InP substrate for monolithic integration;Wake;Electron. Lett.,1987
4. Analysis of the dark current and photoresponse of In0.53Ga0.47As/InP avalanche photodiodes;Forrest;Solid State Electron.,1983
5. Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures;Karlina;Semiconductors,2006
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