In0.53Ga0.47As PIN photodiode grown by MOVPE on a semi-insulating InP substrate for monolithic integration
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19870301?crawler=true&mimetype=application/pdf
Reference7 articles.
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Prediction of the photoluminescence of In0.53Ga0.47As/InP irradiated by 1MeV electron;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-01
2. Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials;Acta Physica Sinica;2015
3. Photodiodes for high performance analog links;RF Photonic Technology in Optical Fiber Links;2002-09-19
4. Comparison between planar InP/InGaAs/InP pin photodiodes with symmetrical and asymmetrical doping profiles;IEE Proceedings - Optoelectronics;2000-04-01
5. Recent developments in photonic devices for telecommunication applications in Taiwan;Optical and Quantum Electronics;1996-10
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