1.3 μm InAsyP1−y/InP strained‐layer quantum well laser diodes grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108163
Reference13 articles.
1. High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasers
2. High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μm
3. Novel etching technique for a buried heterostructure GaInAs/AlGaInAs quantum‐well laser diode
4. Strained multiple quantum well lasers emitting at 1.3 μm grown by low‐pressure metalorganic vapor phase epitaxy
5. Growth and properties of InAsP alloys prepared by organometallic vapor phase epitaxy
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