Growth and properties of InAsP alloys prepared by organometallic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Growth of bright (300 K) luminescence InAsxP1−x(λ=1.7–2.1 μ) on InP substrates by molecular beam epitaxy
2. InAsxP1−x/InP photodiodes prepared by molecular-beam epitaxy
3. Electron mobility of indium arsenide phosphide [In(AsyP1−y)]
4. InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
5. Electronic and optical properties of Fe‐doped InP prepared by organometallic vapor‐phase epitaxy
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1. Charge carrier localization effects on the quantum efficiency and operating temperature range of InAsxP1−x/InP quantum well detectors;Journal of Applied Physics;2016-03-07
2. Time resolved magneto-optical studies of InAsP ternary alloys;SPIE Proceedings;2014-08-28
3. Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers;Journal of Applied Physics;2014-05-21
4. Analysis of temperature dependence of electrical conductivity in degenerate n-type polycrystalline InAsP films in an energy-filtering model with potential fluctuations at grain boundaries;Journal of Applied Physics;2012-12-15
5. Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method;Journal of Alloys and Compounds;2010-09
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