STRUCTURAL, ELECTRONIC, THERMODYNAMIC AND THERMAL PROPERTIES OF ZINC-BLENDE InP, InAs AND THEIR InAsx P1-x TERNARY ALLOYS VIA FIRST PRINCIPLES CALCULATIONS
Author:
Affiliation:
1. Laboratoire LPR, Département de Physique, Faculté des Sciences, Université Badji Mokhtar, Annaba, Algeria
2. Laboratoire de Physique des Matériaux, Faculté des Sciences, Université Libanaise, Elhadath, Beirut, Lebanon
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S021797921350166X
Reference61 articles.
1. 1.3 μm InAsyP1−y/InP strained‐layer quantum well laser diodes grown by metalorganic chemical vapor deposition
2. Growth and characterization of InAs microclusters in InP and InAsP/InP heterostructures by low pressure MOCVD using tertiarybutylarsine
3. Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for 1.55μm applications: Growth, structural, and optical properties
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