1.3μm GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD)
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19890077?crawler=true&mimetype=application/pdf
Reference7 articles.
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InP-based reversed-mesa ridge-waveguide structure for high-performance long-wavelength laser diodes;IEEE Journal of Selected Topics in Quantum Electronics;1997-04
2. Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH strained-layer quantum-well lasers;IEEE Journal of Quantum Electronics;1994
3. Extremely high power 1.48 /spl mu/m GaInAsP/InP GRIN-SCH strained MQW lasers;IEEE Photonics Technology Letters;1994-01
4. Recent Advances in Semiconductor Laser Technology;Applied Photonics;1994
5. 1.48 mu m high-power GaInAsP-InP graded-index separate-confinement-heterostructure multiple-quantum-well laser diodes;IEEE Journal of Quantum Electronics;1993-06
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