Experimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells-Reference-Cited by-同舟云学术

Experimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells

Published:2014-12-21 Issue:23 Volume:116 Page:233508
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kudrawiec R.¹,Kopaczek J.¹,Polak M. P.¹,Scharoch P.¹,Gladysiewicz M.¹,Misiewicz J.¹,Richards R. D.²,Bastiman F.²,David J. P. R.²

Affiliation:

1. Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

2. Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, United Kingdom

Funder

MNiSzW

National Science Centre Poland

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4904740

Reference51 articles.

1. Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs

2. Structural and electronic properties of III-V bismuth compounds

3. Molecular beam epitaxy growth of GaAs1−xBix

4. Temperature Dependence of GaAs1-xBixBand Gap Studied by Photoreflectance Spectroscopy

5. GaBiAs: A material for optoelectronic terahertz devices

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