Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1592625
Reference59 articles.
1. Optical properties of amorphous SiNx(:H) films
2. Optical absorption and defects in amorphous SiNx and SiOx
3. Bonding configuration and defects in amorphous SiNx:H films
4. Electronic structure of silicon nitride
5. Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: II .
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