Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: II .-Reference-Cited by-同舟云学术

Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: II .

Published:1992-03-01 Issue:3 Volume:139 Page:880-889
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Warren W. L.¹²³,Kanicki J.¹²³,Rong F. C.¹²³,Poindexter E. H.¹²³

Affiliation:

1. Electronic Ceramics Division, Sandia National Laboratories, Albuquerque, New Mexico 87185

2. IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598

3. U. S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, New Jersey 07703

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2069319/pdf

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