Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review-Reference-Cited by-同舟云学术

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

Published:2021-11-05 Issue:12 Volume:5 Page:2100708
ISSN:2367-198X
Container-title:Solar RRL
language:en
Short-container-title:Sol. RRL

Author:

Yamaguchi Seira¹²^ORCID,Van Aken Bas B.³^ORCID,Masuda Atsushi²^ORCID,Ohdaira Keisuke⁴^ORCID

Affiliation:

1. Division of Materials ScienceFaculty of Pure and Applied Sciences University of Tsukuba Tsukuba Ibaraki 305-8573 Japan

2. Graduate School of Science and Technology Niigata University Niigata 950-2181 Japan

3. Solar Energy TNO Energy Transition 1755 LE Petten the Netherlands

4. Graduate School of Advanced Science and Technology Japan Advanced Institute of Science and Technology Nomi Ishikawa 923-1292 Japan

Funder

New Energy and Industrial Technology Development Organization

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/solr.202100708

Reference116 articles.

1. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon

2. Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

3. High-efficiency heterojunction crystalline Si solar cells

4. n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation

5. J.Schmidt A. G.Aberle R.Hezel inProc. 26th IEEE Photovoltaic Specialists Conf. IEEE Piscataway NJ1997 pp.13–18.

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