He induced nanovoids for point-defect engineering in B-implanted crystalline Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2427101
Reference42 articles.
1. Influence of annealing on the concentration profiles of boron implantations in silicon
2. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
3. Transient enhanced diffusion of boron in Si
4. Diffusion of boron in silicon during post‐implantation annealing
5. Fast commutation of high current in double wire array Z-pinch loads
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