On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers-Reference-Cited by-同舟云学术

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

Published:2021-03-22 Issue:12 Volume:118 Page:122103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Khachariya Dolar¹^ORCID,Szymanski Dennis²^ORCID,Breckenridge M. Hayden²^ORCID,Reddy Pramod³^ORCID,Kohn Erhard²,Sitar Zlatko²³^ORCID,Collazo Ramón²,Pavlidis Spyridon¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911, USA

2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA

3. Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0039888

Reference45 articles.

1. Influence of crystal polarity on the properties of Pt/GaN Schottky diodes

2. Comment on “Influence of crystal polarity on the properties of Pt/GaN Schottky diodes” [Appl. Phys. Lett. 77, 2012 (2000)]

3. Temperature dependence of GaN Schottky diodes I–V characteristics

4. Electrical characterization of Schottky contacts to N-polar GaN

5. The effect of polarity and surface states on the Fermi level at III-nitride surfaces

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