The effect of polarity and surface states on the Fermi level at III-nitride surfaces-Reference-Cited by-同舟云学术

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The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Published:2014-09-28 Issue:12 Volume:116 Page:123701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Reddy Pramod¹,Bryan Isaac¹,Bryan Zachary¹,Guo Wei¹,Hussey Lindsay¹,Collazo Ramon¹,Sitar Zlatko¹

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA

Funder

National Science Foundation (NSF)

Air Force Office of Scientific Research (AFOSR)

Defense Advanced Research Projects Agency (DARPA)

Advanced Research Projects Agency - Energy (ARPA-E)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896377

Reference49 articles.

1. Strain in Si doped GaN and the Fermi level effect

2. Nitride Semiconductor Devices

3. Ni/Au Schottky diodes on AlxGa1-xN (0.7

4. A review of the metal–GaN contact technology

5. Metal contacts to gallium nitride

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