Comment on “Influence of crystal polarity on the properties of Pt/GaN Schottky diodes” [Appl. Phys. Lett. 77, 2012 (2000)]
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1435067
Reference10 articles.
1. Influence of crystal polarity on the properties of Pt/GaN Schottky diodes
2. On the physics of metal-semiconductor interfaces
3. Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities
4. Theory of Surface States
5. Calculation of Schottky barrier heights from semiconductor band structures
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