Tuning the resistive switching in tantalum oxide-based memristors by annealing-Reference-Cited by-同舟云学术

Tuning the resistive switching in tantalum oxide-based memristors by annealing

Published:2020-06-01 Issue:6 Volume:10 Page:065112
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Li Yang¹^ORCID,Suyolcu Y. Eren²³^ORCID,Sanna Simone¹⁴^ORCID,Christensen Dennis Valbjørn¹^ORCID,Traulsen Marie Lund¹^ORCID,Stamate Eugen¹^ORCID,Pedersen Christian Søndergaard¹^ORCID,van Aken Peter A.²^ORCID,García Lastra Juan Maria¹^ORCID,Esposito Vincenzo¹^ORCID,Pryds Nini¹^ORCID

Affiliation:

1. Department of Energy Conversion and Storage, Technical University of Denmark, Lyngby 2800, Denmark

2. Max Planck Institute for Solid State Research, Heisenbergstraße 1, Stuttgart 70569, Germany

3. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

4. Dipartimento di Ingegneria Civile e Ingegneria Informatica and CNR-SPIN, Università di Roma Tor Vergata, Via del Politecnico 1, I-00133 Roma, Italy

Funder

The Independent Research Fund Denmark

The European Union’s Horizon 2020 Research and Innovation Program

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0004722

Reference19 articles.

1. Sub-nanosecond switching of a tantalum oxide memristor

2. The O-Ta (Oxygen-Tantalum) system