Design of memristor-based combinational logic circuits
Author:
Affiliation:
1. Nanjing University of Posts and Telecommunications
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Link
https://www.jstage.jst.go.jp/article/elex/21/3/21_21.20230587/_pdf
Reference33 articles.
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2. [2] D.B. Strukov, et al.: “The missing memristor found,” Nature 453 (2008) 80 (DOI: 10.1038/nature06932).
3. [3] Y. Li, et al.: “Tuning the resistive switching in tantalum oxide-based memristors by annealing,” AIP Adv. 10 (2020) 065112 (DOI: 10.1063/5.0004722).
4. [4] S.G. Byeon and Y. Tzeng: “High performance sputtered/anodized tantalum oxide capacitors,” International Electron Devices Meeting (Technical Digest) (1988) (DOI: 10.1109/IEDM.1988.32914).
5. [5] T. Heisig, et al.: “Chemical structure of conductive filaments in tantalum oxide memristive devices and its implications for the formation mechanism,” Adv. Electron. Mater. 8 (2022) 2100936 (DOI: 10.1002/aelm.202100936).
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