Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM-Reference-Cited by-同舟云学术

Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM

Published:2016-10-24 Issue:17 Volume:109 Page:173503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sharath S. U.¹^ORCID,Joseph M. J.¹,Vogel S.¹,Hildebrandt E.¹,Komissinskiy P.¹,Kurian J.¹,Schroeder T.²³,Alff L.¹

Affiliation:

1. Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiß-Str. 2, 64287 Darmstadt, Germany

2. IHP, Im Technologiepark 25, 15236 Frankfurt Oder, Germany

3. Brandenburgische Technische Universität, Konrad-Zuse-Str. 1, 03046 Cottbus, Germany

Funder

ENIAC JU PANACHE

Deutsche Forschungsgemeinschaft (DFG)

Bundesministerium für Bildung und Forschung (BMBF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4965872

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4. High switching endurance in TaOx memristive devices

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