Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1798399
Reference24 articles.
1. Conductivity Anisotropy in Epitaxial 6H and 4H Sic
2. Free electron density and mobility in high-quality 4H–SiC
3. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
4. Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy
5. Decrease in Al acceptor density in Al-doped 4H-SiC by irradiation with 4.6 MeV electrons
Cited by 66 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lateral 1200V SiC schottky barrier diode with single event burnout tolerance;Power Electronic Devices and Components;2024-08
2. Wide Temperature Range Modeling of Implanted Resistors Based on 4H-SiC CMOS Process;IEEE Transactions on Electron Devices;2024-06
3. Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC;Journal of Applied Physics;2024-05-09
4. Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement;IEEE Transactions on Industry Applications;2024-05
5. Advances in Inversion Channel Mobility Model for 4H-SiC MOS Devices;Silicon;2023-08-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3