Decrease in Al acceptor density in Al-doped 4H-SiC by irradiation with 4.6 MeV electrons
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1634381
Reference18 articles.
1. Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide
2. Radiation degradation of large fluence irradiated space silicon solar cells
3. Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements
4. Temperature dependence of electron concentration in type-converted silicon by 1×1017 cm−2 fluence irradiation of 1 MeV electrons
5. EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC
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1. Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC;physica status solidi (b);2020-11-16
2. Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC;Journal of Physics and Chemistry of Solids;2020-07
3. Incomplete ionization in aluminum-doped 4H-silicon carbide;Journal of Applied Physics;2019-10-14
4. Operation of 4H-SiC high voltage normally-OFF V-JFET in radiation hard conditions: Simulations and experiment;Microelectronics Reliability;2017-07
5. Laser plasma monitored by silicon carbide detectors;Radiation Effects and Defects in Solids;2015-04-03
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