Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements-Reference-Cited by-同舟云学术

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Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements

Published:1998-11-15 Issue:Part 1, No. 11 Volume:37 Page:6034-6040
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsuura Hideharu,Uchida Yoshitsugu,Hisamatsu Tadashi,Matsuda Sumio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC;physica status solidi (b);2020-11-16

2. Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation;Journal of Applied Physics;2008-08-15

3. Mechanisms of Reduction in Hole Concentration in Al-Implanted p-Type 6H-SiC by 1 MeV Electron Irradiation;Japanese Journal of Applied Physics;2008-07-11

4. Accurate Determination of Acceptor Densities and Acceptor Levels in Undoped InGaSb from Temperature Dependence of Hole Concentration;Japanese Journal of Applied Physics;2006-08-04

5. Si Substrate Suitable for Radiation-Resistant Space Solar Cells;Japanese Journal of Applied Physics;2006-04-07

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